1 AM4825P analog power preliminary publication order number: ds-am4825_g these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. p-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe soic-8 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature v ds (v) r ds(on) m( ? )i d (a) 13 @ v gs = -10v -11.5 19 @ v gs = -4.5v -9.3 product summary -30 symbol maximum units v ds -30 v gs 25 t a =25 o c-11.5 t a =70 o c-9.3 i dm 50 i s -2.1 a t a =25 o c3.1 t a =70 o c2.3 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a symbol maximum units maximum junction-to-case a t <= 5 sec r jc 25 o c/ w maximum junction-to-ambient a t <= 5 sec r ja 50 o c/w thermal resistance ratings parame te r 1 2 3 45 6 7 8
2 AM4825P analog power preliminary publication order number: ds-am4825_g notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max drain-source breakdown voltage v (br)dss v gs = 0 v, i d = -250 ua -30 gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -1 gate-body leakage i gss v ds = 0 v, v gs = 25 v 100 na v ds = -24 v, v gs = 0 v -1 v ds = -24 v, v gs = 0 v, t j = 55 o c -5 on-state drain current a i d(on) v ds = -5 v, v gs = -10 v -50 a v gs = -10 v, i d = -11.5 a 13 v gs = -4.5 v, i d = -9.3 a 19.0 forward tranconductance a g fs v ds = -15 v, i d = -11.5 a 29 s diode forward voltage v sd i s = 2.5 a, v gs = 0 v -0.8 v total gate charge q g 25 gate-source charge q gs 11 gate-drain charge q gd 17 input capacitance c iss 2300 output capacitance c oss 600 reverse transfer capacitance c rss 300 turn-on delay time t d(on) 15 rise time t r 13 turn-off delay time t d(off) 100 fall-time t f 54 m ? unit v dd = -15 v, r l = 6 ? , i d = -1 a, vgen = -10 v ns v ds = -15 v, v gs = -5 v, i d = -11.5 a nc dynamic b v ds =-15v, v gs =0v, f=1mhz pf drain-source on-resistance a r ds(on) specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static v test conditions symbol parameter limits
3 AM4825P analog power preliminary publication order number: ds-am4825_g typical electrical characteristics (p-channel) figure 1. on-region characteristics figure 2. on-resistance variation with drain current and gate voltage figure 4. on-resistance wi th gate to source voltage figure 5. transfer characteristics figure 3. on-resistance variation with temperature -50 -40 -30 -20 -10 0 -3 -2 -1 0 vds - drain to source voltage (v) 2.5 v 3 v 3.5 v 4v thru 10v -50 -40 -30 -20 -10 0 -5 -4 -3 -2 -1 0 v gs - gate to source voltage (v) i - drain current (a) 25c 125c -55c 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 vsd - source to drain current (v) is - source current (a) tj = 150c tj = 25c figure 6. body diode forward voltage variation with source current and temperature 0 0. 01 0. 02 0. 03 0. 04 0. 05 024 6810 vgs - ga t e t o so ur c e vo l t a ge ( v) rds(on) i d = 11. 5a 0. 6 0. 7 0. 8 0. 9 1. 0 1. 1 1. 2 1. 3 1. 4 1. 5 1. 6 -50-250255075100125150 t j - junction temperature (oc) v gs = 10 v i d = 11. 5 a normalized rds(on)
4 AM4825P analog power preliminary publication order number: ds-am4825_g typical electrical characteristics (p-channel) figure 9. maximum safe operating area figure 10. single pulse maximum power dissipation normalized thermal transien t junction to ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration (s) p dm t1 t2 1. duty cycal d = t1/t2 2. per unit bas e r ja =70c/w 3. t jm - t a = p dm z jc 4. sureface mounted single pulse 0.5 0.2 0.1 0.05 0.02 figure 11. transient thermal response curve 0 1000 2000 3000 4000 -20 -15 -10 -5 0 v ds (v) capacitance (pf) cis s coss crs s figure 8. capacitance characteristics 0 5 10 15 20 25 30 35 40 45 50 0.01 0.1 1 10 100 1000 pulse time (s) power (w) -0.4 -0.2 0 0.2 0.4 0.6 0.8 -50 -25 0 25 50 75 100 125 150 t j - juncation t emperature (oc) v variance (v) figure 7. gate charge characteristics 0 2 4 6 8 10 0 1020304050 q gs , total gate charge (nc) v gs gate to source voltage (v) v ds = 10v
5 AM4825P analog power preliminary publication order number: ds-am4825_g package information so-8: 8lead h x 45
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